sot-89-3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd sot-89-3l plastic-encapsulate transistors KTC4373 transistor (npn) features z small flat package z high voltage application z high voltage z high transition frequency maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 120 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =120v,i e =0 100 na emitter cut-off current i ebo v eb =5v,i c =0 100 na dc current gain h fe v ce =5v, i c =100ma 80 240 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v base-emitter voltage v be v ce =5v, i c =500ma 1 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 30 pf transition frequency f t v ce =5v,i c = 500ma 120 mhz classification of h fe rank o y range 80 C 160 120 C 240 marking co cy symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current 800 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 d , nov ,2015 c
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 2 d , nov ,2015 c
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 3 d , nov ,2015 c
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